Veeco Introduces GaN MOCVD Equipment for High Brightness LEDs


Veeco introduces the TurboDisc® K465i?, a gallium nitride (GaN) metal organic chemical vapor deposition (MOCVD) device for the production of high-brightness LEDs (HB LEDs), which was quickly tested by Veeco users in the LED industry. With the approval of mass production, the company has received orders from multiple LED users in the Asia Pacific region.

Veeco pointed out that this new product TurboDisc K465i is based on Veeco's proven K-family platform, combined with the industry's highest production efficiency, within the 5nm bin error range, the best LED yield of the same level is close to 90%, greatly improved Bin rate. The TurboDisc K465i is fully automated and can continue to produce motion in a short period of time after routine maintenance, increasing production efficiency. In the competition of similar products, not only the highest production efficiency, but also a lot of cost savings.

TurboDisc K465i Design: Uniformity and Repeatability

At the heart of the TurboDiscK465i GaN MOCVD system, Veeco's patent-pending Uniform FlowFlange technology. It is designed to produce a uniform gas flow pattern of alkyl and hydride gases that flow evenly through the epitaxial wafer of the LED. The device produces LED chips for superior uniformity and repeatability. The K465 i also uses Veeco's most advanced reactor technology. FlowFlange's simplified design provides easy process optimization for fast process optimization, up to 8 inches for epitaxial wafers, and the fast re-production capability of the device ensures the highest productivity in the LED industry.


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